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| SIEGET 25 NPN Silicon RF Transistor Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F = 1.1 dB at 1.8 GHz outstanding G ma = 20 dB at 1.8 GHz Transition frequency f T = 25 GHz Gold metallization for high reliability TSFP-4 to p v ie w " ! BFP420F 3 4 XYs 2 1 AMs SIEGET 25 GHz f T - Line d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP420F Maximum Ratings Parameter Marking AMs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO VCBO VEBO IC IB Ptot Tj TA Tstg Value 4.5 15 1.5 35 3 160 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 111C 1) Thermal Resistance Junction - soldering point2) RthJS 240 1T is measured on the emitter lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Package TSFP-4 Unit V mA mW C K/W Dec-07-2001 SIEGET 25 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 4 V AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 Third order intercept point at output 2) IC = 20 mA, VCE = 2 V, ZS=ZL =50, f = 1.8 GHz 1dB Compression point at output3) IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZL=50 fT Ccb Cce Ceb F 18 25 0.15 0.33 0.5 1.1 BFP420F Symbol min. V(BR)CEO ICBO IEBO hFE 4.5 50 Values typ. 5 80 max. 200 35 150 Gma - |S21|2 - IP3 - P-1dB - 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1MHz to 6GHz. 3DC current no input power 2 Unit V nA A - 0.3 - GHz pF dB 20 - 17 - 24 - dBm 10.5 - Dec-07-2001 SIEGET 25 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.20045 28.383 2.0518 19.705 1.1724 3.4849 1.8063 6.7661 1 0.81969 2.3249 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 72.534 0.48731 7.8287 0.69141 8.5757 0.31111 0.8051 0.42199 0 0.30232 0 0 0.73234 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM BFP420F V deg F - 0.46576 0.23794 234.53 0.3 0.75 1.11 300 V - fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: LBO = C CB 0.22 0.28 0.22 nH nH nH fF fF fF LBI = RLBI = LEI = RLEI = LCI = RLCI = KCI-EI = KBI-CI = KBI-EI = 0.42 0.15 0.26 0.11 0.35 0.13 -0.05 -0.08 0.20 L BO B L BI E' C BE L EI C'-E'Diode C CE KBO-CO = 0.01 KEO-CO = 0.11 nH - CBE = L EO E EHA07389 34 2 33 CBC = CCE = Valid up to 6GHz The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. RLxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between the inductances Lxa and Lyb. The referencepins for the coupled ports are B, E, C, B, E, C. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 3 Dec-07-2001 B' Transistor Chip C' L CI L CO C LCO = nH KBO-EO = 0.10 LEO = IS = 3.5 fA N= 1.02 - RS = 10 1.2432 19.049 1.3325 0.019237 0.72983 0.10105 fA fA mA nH SIEGET 25 BFP420F For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. 4 Dec-07-2001 |
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